ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,633, issued on Sept. 8, was assigned to CXMT Corp. (Hefei City, China). "Semiconductor structure and method for manufacturing same, electro... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,634, issued on Sept. 8, was assigned to Sony Semiconductor Solutions Corp. (Kanagawa, Japan). "Operation device and solid-state imaging dev... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,635, issued on Sept. 8, was assigned to INTERNATIONAL BUSINESS MACHINES Corp. (Armonk, N.Y.). "Delay circuitry based on pseudo-SRAM cells f... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,636, issued on Sept. 8, was assigned to NUMEM INC. (Sunnyvale, Calif.). "Reconfigurable compute memory having selection logic to control co... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,637, issued on Sept. 8, was assigned to Aril Computer Corp. (Los Altos, Calif.). "Multi-port static random-access memory (SRAM) with buffer... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,638, issued on Sept. 8, was assigned to Vervain LLC (Plano, Texas). "Lifetime mixed level non-volatile memory system" was invented by G. R.... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,639, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho). "Forward-looking determination of read voltage using memory ... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,640, issued on Sept. 8, was assigned to SAMSUNG ELECTRONICS Co. Ltd. (Gyeonggi-do, South Korea). "Non-volatile content addressable memory d... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,641, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho). "Microelectronic devices including interconnections, related... Read More
ALEXANDRIA, Va., Sept. 8 -- United States Patent no. 12,731,642, issued on Sept. 8, was assigned to Micron Technology Inc. (Boise, Idaho). "Elongated capacitors in 3D NAND memory devices" was invente... Read More